IXFT70N30Q3
MOSFET N-CH 300V 70A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFT70N30Q3 is an N-Channel Power MOSFET from the HiPerFET™, Q3 Class series. This device offers a 300V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 70A at 25°C (Tc). With a maximum on-resistance (Rds On) of 54mOhm at 35A and 10V Vgs, it provides efficient switching performance. The MOSFET features a high power dissipation of 830W (Tc) and a gate charge of 98 nC at 10V. Input capacitance (Ciss) is rated at 4735 pF at 25V. Designed for surface mounting, it is housed in a TO-268-3, D3PAK (2 Leads + Tab), TO-268AA package. This component is suitable for demanding applications in power supply, industrial motor control, and high-voltage conversion systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4735 pF @ 25 V |
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