IXFT70N20Q3
MOSFET N-CH 200V 70A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™, Q3 Class N-Channel Power MOSFET, part number IXFT70N20Q3. This component features a 200 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 70A at 25°C (Tc). With a maximum on-resistance (Rds On) of 40mOhm at 35A and 10V, this MOSFET offers efficient switching performance. The device supports a gate drive voltage of 10V for minimum Rds On and has a gate charge (Qg) of 67 nC at 10V. Input capacitance (Ciss) is a maximum of 3150 pF at 25V. The IXFT70N20Q3 is designed for surface mounting in a TO-268-3, D3PAK (2 Leads + Tab), TO-268AA package. It can handle a maximum power dissipation of 690W at 25°C (Tc) and operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supply, battery charging, and motor control systems.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 690W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3150 pF @ 25 V |
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