IXFT70N15
MOSFET N-CH 150V 70A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ MOSFET, part number IXFT70N15, is an N-Channel power MOSFET designed for high-efficiency applications. This component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 70A at 25°C, with a maximum power dissipation of 300W at the same temperature. Its low on-resistance of 28mOhm at 35A and 10V Vgs makes it suitable for demanding power conversion tasks. The IXFT70N15 boasts a Gate Charge (Qg) of 180 nC at 10V and an input capacitance (Ciss) of 3600 pF at 25V. Packaged in a TO-268AA (TO-268-3, D3PAK) surface-mount configuration, it operates across a wide temperature range from -55°C to 150°C. This device finds application in power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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