IXFT6N100Q
MOSFET N-CH 1000V 6A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT6N100Q is a HiPerFET™ N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) of 6 A at 25°C. With a maximum power dissipation of 180 W (Tc), it utilizes a TO-268AA surface mount package. Key electrical characteristics include a maximum On-Resistance (Rds On) of 1.9 Ohm at 3 A and 10 V, and a gate charge (Qg) of 48 nC at 10 V. The input capacitance (Ciss) is rated at a maximum of 2200 pF at 25 V. This MOSFET is suitable for demanding power conversion circuits across various industries including industrial power supplies and renewable energy systems. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 2.5mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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