IXFT6N100F
MOSFET N-CH 1000V 6A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT6N100F is an N-Channel Power MOSFET from the HiPerRF™ series, designed for high voltage applications. This component offers a drain-to-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 6A at 25°C (Tc). With a maximum power dissipation of 180W (Tc), it is suitable for demanding power conversion tasks. Key electrical characteristics include a maximum on-resistance (Rds On) of 1.9 Ohm at 3A and 10V, and a gate charge (Qg) of 54 nC at 10V. The input capacitance (Ciss) is 1770 pF at 25V. This MOSFET is packaged in a TO-268-3, D3PAK (2 Leads + Tab), TO-268AA surface mount case, allowing for efficient thermal management. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power supply units, industrial motor control, and high-voltage switching applications.
Additional Information
Series: HiPerRF™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Supplier Device Package | TO-268 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |
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