IXFT60N65X2HV
MOSFET N-CH 650V 60A TO268HVManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Ultra X2 Series IXFT60N65X2HV is a 650V N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current (Id) of 60A at 25°C and a low Rds On of 52mOhm maximum at 30A, 10V. The 780W maximum power dissipation and robust TO-268HV package make it suitable for demanding power conversion systems. Key electrical characteristics include a gate charge (Qg) of 108 nC maximum at 10V and an input capacitance (Ciss) of 6300 pF maximum at 25V. Operating across a temperature range of -55°C to 150°C, this surface-mount device is utilized in power supplies, industrial automation, and renewable energy systems.
Additional Information
Series: HiPerFET™, Ultra X2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 780W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-268HV (IXFT) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6300 pF @ 25 V |
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