IXFT60N50P3
MOSFET N-CH 500V 60A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT60N50P3 is a HiPerFET™, Polar3™ N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 60A at 25°C (Tc), with a maximum power dissipation of 1040W (Tc). Key electrical characteristics include a maximum Rds On of 100mOhm at 30A and 10V, a gate charge (Qg) of 96 nC at 10V, and input capacitance (Ciss) of 6250 pF at 25V. The MOSFET operates with a gate drive voltage up to 10V and has a maximum Vgs of ±30V. Packaged in a TO-268AA (TO-268-3, D3PAK) surface mount configuration, this component is suitable for high-power switching applications across various industries including power supplies, motor control, and industrial automation. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1040W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6250 pF @ 25 V |
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