IXFT60N25Q
MOSFET N-CH 250V 60A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT60N25Q is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 60A at 25°C (Tc), with a maximum power dissipation of 360W (Tc). The low on-resistance (Rds On) of 47mOhm is achieved at 500mA and 10V gate-source voltage, supported by a 10V drive voltage. Key parameters include a gate charge (Qg) of 180 nC at 10V and input capacitance (Ciss) of 5100 pF at 25V. The IXFT60N25Q is available in a TO-268AA surface mount package. This MOSFET is suitable for use in industrial power supplies, motor control, and high-power switching circuits across various industries.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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