IXFT58N20Q TRL
MOSFET N-CH 200V 58A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFT58N20Q-TRL is a high-performance N-Channel Power MOSFET designed for demanding applications. This device offers a 200V (Vdss) breakdown voltage and a continuous drain current capability of 58A at 25°C (Tc). Featuring a low on-resistance of 40mOhm (Max) at 29A and 10V (Vgs), it ensures efficient power transfer. The TO-268HV (IXFT) surface mount package provides excellent thermal management, supporting a maximum power dissipation of 300W (Tc). Key parameters include a gate charge (Qg) of 140 nC (Max) at 10V and input capacitance (Ciss) of 3600 pF (Max) at 25V. Its robust construction and specifications make it suitable for power conversion, motor control, and industrial power supplies.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268HV (IXFT) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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