IXFT58N20Q
MOSFET N-CH 200V 58A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFT58N20Q is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 58A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The IXYS IXFT58N20Q offers a low on-resistance (Rds On) of 40mOhm at 29A and 10V gate-source voltage. Key parameters include gate charge (Qg) of 140 nC @ 10 V and input capacitance (Ciss) of 3600 pF @ 25 V. The component is housed in a TO-268AA surface mount package, enabling robust thermal performance and ease of integration in high-power density designs. This MOSFET is suitable for various industrial applications, including power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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