IXFT52N50P2
MOSFET N-CH 500V 52A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT52N50P2 is an N-Channel Power MOSFET from the HiPerFET™, PolarP2™ series. This device features a drain-to-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 52 A at 25°C (Tc). With a low on-resistance (Rds On) of 120 mOhm maximum at 26 A and 10 V, it offers efficient power handling up to 960 W (Tc). The MOSFET is packaged in a TO-268AA (TO-268-3, D3PAK) surface mount package, suitable for high-power applications. Key parameters include a gate charge (Qg) of 113 nC maximum at 10 V and input capacitance (Ciss) of 6800 pF maximum at 25 V. Its operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, PolarP2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 960W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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