IXFT52N30Q
MOSFET N-CH 300V 52A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFT52N30Q is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 300V drain-source voltage (Vdss) and a continuous drain current rating of 52A at 25°C (Tc), with a maximum power dissipation of 360W (Tc). The low on-resistance of 60mOhm is achieved at 500mA drain current and 10V gate-source voltage (Vgs). Key parameters include input capacitance (Ciss) of 5300pF at 25V and gate charge (Qg) of 150nC at 10V Vgs. The IXFT52N30Q is housed in a TO-268AA surface-mount package, suitable for thermal management in high-power systems. Operating temperature range is -55°C to 150°C. This device is utilized in power supply, motor control, and industrial power conversion applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |
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