IXFT50N60X
MOSFET N-CH 600V 50A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT50N60X is a HiPerFET™, Ultra X series N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 50A at 25°C (Tc), with a maximum power dissipation of 660W (Tc). Key electrical characteristics include a low Rds On of 73mOhm at 25A, 10V, and a gate charge (Qg) of 116 nC at 10V. Input capacitance (Ciss) is a maximum of 4660 pF at 25V. The device is housed in a TO-268-3, D3PAK (2 Leads + Tab), TO-268AA surface mount package. Operating temperature range is from -55°C to 150°C (TJ). The IXFT50N60X is suitable for use in power supplies, motor control, and industrial power conversion.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 73mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 660W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4660 pF @ 25 V |
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