IXFT50N50P3
MOSFET N-CH 500V 50A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFT50N50P3 is a HiPerFET™, Polar3™ N-Channel Power MOSFET designed for demanding applications. This component features a 500 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc), with a maximum power dissipation of 960W (Tc). The Rds(on) is specified at a maximum of 120mOhm at 25A and 10V gate drive. Key parameters include a gate charge (Qg) of 85 nC (max) and input capacitance (Ciss) of 4335 pF (max) at 25 V. The IXFT50N50P3 utilizes surface mount technology, housed in a TO-268-3, D3PAK (2 Leads + Tab), also known as TO-268AA package. Operating temperature ranges from -55°C to 150°C (TJ). This device is suitable for high-efficiency power switching applications in industries such as power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 59 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 960W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 0 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4335 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFQ34N50P3
MOSFET N-CH 500V 34A TO3P
IXFQ20N50P3
MOSFET N-CH 500V 20A TO3P
IXFP16N50P3
MOSFET N-CH 500V 16A TO220AB
