IXFT50N30Q3
MOSFET N-CH 300V 50A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT50N30Q3 is an N-Channel enhancement mode MOSFET from the HiPerFET™, Q3 Class series. This device features a drain-source voltage (Vdss) of 300V and a continuous drain current (Id) of 50A at 25°C (Tc). With a low on-resistance (Rds On) of 80mOhm maximum at 25A and 10V (Vgs), it offers efficient power handling with a maximum power dissipation of 690W (Tc). The MOSFET is housed in a TO-268AA surface mount package, suitable for demanding applications. Key parameters include a gate charge (Qg) of 65 nC maximum at 10V (Vgs) and input capacitance (Ciss) of 3165 pF maximum at 25V (Vds). This component is utilized in industries such as industrial power supplies and high-power switching applications. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 690W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3165 pF @ 25 V |
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