IXFT50N20
MOSFET N-CH 200V 50A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™ N-Channel Power MOSFET, part number IXFT50N20. This device features a 200V drain-source voltage (Vdss) and a continuous drain current of 50A at 25°C (Tc). With a maximum on-resistance (Rds On) of 45mOhm at 25A and 10V, it offers efficient power handling. The IXFT50N20 is packaged in a TO-268AA surface-mount format, designed for high-density applications. Key parameters include a gate charge (Qg) of 220 nC at 10V and input capacitance (Ciss) of 4400 pF at 25V. Maximum power dissipation is rated at 300W (Tc). This component is suitable for applications in power supply design, motor control, and industrial automation.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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