IXFT42N50P2
MOSFET N-CH 500V 42A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT42N50P2 is a HiPerFET™, PolarP2™ series N-Channel Power MOSFET designed for high-performance applications. This device features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 42A at 25°C (Tc), with a maximum power dissipation of 830W (Tc). The Rds On is specified at a maximum of 145mOhm at 500mA and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 92 nC at 10V and input capacitance (Ciss) of 5300 pF at 25V. Operating over a temperature range of -55°C to 150°C (TJ), this MOSFET is housed in a TO-268AA surface mount package. Its robust design makes it suitable for use in power supply and power conversion circuits across various industrial sectors.
Additional Information
Series: HiPerFET™, PolarP2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |
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