IXFT40N30Q TR
MOSFET N-CH 300V 40A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT40N30Q-TR is an N-Channel HiPerFET™ Power MOSFET designed for high-efficiency power switching applications. This device features a 300V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 40A at 25°C (Tc). With a low on-resistance of 85mOhm maximum at 20A and 10V gate-source voltage, it minimizes conduction losses. The MOSFET offers a high power dissipation of 300W (Tc) and a maximum junction temperature of 150°C, suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 140 nC (max) at 10V and input capacitance (Ciss) of 3560 pF (max) at 25V. The IXFT40N30Q-TR is packaged in a TO-268HV surface mount package, suitable for automated assembly. This component finds application in power supplies, motor drives, and industrial power conversion systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268HV (IXFT) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3560 pF @ 25 V |
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