IXFT40N30Q
MOSFET N-CH 300V 40A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFT40N30Q is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 300V drain-source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C (Tc). With a maximum power dissipation of 300W (Tc), the IXFT40N30Q is suitable for demanding thermal environments. The Rds(on) is specified at a maximum of 80mOhm at 500mA and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 140nC @ 10V and input capacitance (Ciss) of 3100pF @ 25V. The device utilizes a TO-268AA surface mount package, ideal for automated assembly. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is widely employed in power factor correction (PFC), switch-mode power supplies (SMPS), and high-voltage DC-DC converters.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V |
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