IXFT32N50Q
MOSFET N-CH 500V 32A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT32N50Q is a HiPerFET™ N-Channel Power MOSFET designed for demanding applications. This component features a 500V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 32A at 25°C (Tc). With a low on-resistance (Rds On) of 160mOhm maximum at 16A and 10V gate-source voltage, it offers efficient power handling up to 360W (Tc). The device utilizes Metal Oxide technology and has a gate charge (Qg) of 190nC maximum at 10V. Input capacitance (Ciss) is rated at 4925pF maximum at 25V. The IXFT32N50Q is supplied in a TO-268AA package for surface mounting and operates within a temperature range of -55°C to 150°C. This component is suitable for use in power supply, industrial, and automotive sectors requiring high-voltage switching capabilities.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4925 pF @ 25 V |
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