IXFT32N50
MOSFET N-CH 500V 32A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFT32N50 is a high-performance N-channel power MOSFET designed for demanding applications. This device features a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 32A at 25°C (Tc). With a low on-resistance (Rds On) of 150mOhm at 15A and 10V Vgs, it offers efficient power switching. The power dissipation (Pd) is rated at 360W (Tc). Fabricated using MOSFET technology, it is housed in a TO-268AA surface mount package. Key parameters include a gate charge (Qg) of 300 nC at 10V and input capacitance (Ciss) of 5700 pF at 25V. This component is suitable for power conversion, industrial motor control, and high-voltage switching applications. It operates within an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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