IXFT320N10T2
MOSFET N-CH 100V 320A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXFT320N10T2 is a HiPerFET™, TrenchT2™ N-Channel Power MOSFET. This component offers a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 320A at 25°C (Tc). With an Rds On maximum of 3.5mOhm at 100A and 10V gate-source voltage, it is designed for high-efficiency power conversion. The device features low on-resistance and high current handling capabilities, making it suitable for applications in industrial power supplies, electric vehicle charging, and high-power switching circuits. It is packaged in a TO-268AA surface mount package, providing excellent thermal performance with a maximum power dissipation of 1000W (Tc). Key electrical parameters include a gate charge (Qg) of 430 nC at 10V and input capacitance (Ciss) of 26000 pF at 25V. The operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: HiPerFET™, TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 320A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1000W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 430 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 26000 pF @ 25 V |
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