IXFT30N85XHV
MOSFET N-CH 850V 30A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFT30N85XHV is a high-performance N-Channel Power MOSFET from the HiPerFET™, Ultra X series. This device features a Drain-Source Voltage (Vdss) of 850 V and a continuous Drain Current (Id) of 30 A at 25°C. It offers a maximum on-resistance (Rds On) of 220 mOhm at 500 mA and 10 V, with a gate charge (Qg) of 68 nC at 10 V. The MOSFET is designed for surface mounting in a TO-268HV package, providing efficient thermal management with a maximum power dissipation of 695 W at 25°C. Its robust construction and high voltage capabilities make it suitable for applications in power factor correction, switched-mode power supplies, and motor control systems. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 695W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Supplier Device Package | TO-268HV (IXFT) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 850 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2460 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFP8N85X
MOSFET N-CH 850V 8A TO220AB
IXFY4N85X
MOSFET N-CH 850V 3.5A TO252
IXFH30N60X
MOSFET N-CH 600V 30A TO247
