IXFT30N60P
MOSFET N-CH 600V 30A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT30N60P is a HiPerFET™, Polar series N-channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 30A at 25°C (Tc), with a maximum power dissipation of 500W (Tc). The device exhibits a low on-resistance (Rds On) of 240mOhm at 15A and 10V Vgs, optimized for minimal conduction losses. Key parameters include Gate Charge (Qg) of 82 nC at 10V and Input Capacitance (Ciss) of 4000 pF at 25V. The IXFT30N60P is supplied in a TO-268AA surface mount package, suitable for demanding thermal environments. This MOSFET is commonly utilized in power supplies, motor control, and industrial applications.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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