IXFT30N50Q3
MOSFET N-CH 500V 30A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT30N50Q3 is a HiPerFET™, Q3 Class N-Channel Power MOSFET designed for high-efficiency applications. This component features a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 30A at 25°C (Tc). With a low on-resistance (Rds On) of 200mOhm at 15A and 10V Vgs, it offers excellent conduction characteristics. The device boasts a high power dissipation capability of 690W (Tc) and a gate charge (Qg) of 62 nC at 10V.
This MOSFET utilizes Metal Oxide technology and is housed in a surface mount TO-268AA package (TO-268-3, D3PAK). It operates across a wide temperature range from -55°C to 150°C (TJ). Key parameters include input capacitance (Ciss) of 3200 pF at 25V and a threshold voltage (Vgs(th)) of 6.5V at 4mA. The IXFT30N50Q3 is suitable for use in power supply, power factor correction, and motor drive circuits within the industrial and automotive sectors.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 690W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 25 V |
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