IXFT30N50Q
MOSFET N-CH 500V 30A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT30N50Q is a HiPerFET™ N-Channel Power MOSFET designed for high-performance applications. This component features a 500 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 30 A at 25°C (Tc). Its low on-resistance is specified as 160 mOhm maximum at 15 A and 10 V gate-source voltage (Vgs). The device offers a maximum power dissipation of 360 W (Tc) and is packaged in a surface-mount TO-268AA (D3PAK) configuration. With a gate charge (Qg) of 190 nC maximum at 10 V and input capacitance (Ciss) of 4925 pF maximum at 25 V, it is suitable for demanding power switching circuits. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4925 pF @ 25 V |
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