IXFT30N50
MOSFET N-CH 500V 30A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT30N50 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 500 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 30 A at 25°C. With a maximum on-resistance (Rds On) of 160 mOhm at 15 A and 10 V, it offers low conduction losses. The device has a maximum power dissipation of 360 W at 25°C (Tc) and a gate charge (Qg) of 300 nC at 10 V. It is housed in a TO-268AA package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in sectors such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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