IXFT26N60Q
MOSFET N-CH 600V 26A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT26N60Q is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 26A at 25°C (Tc), with a maximum power dissipation of 360W (Tc). The low on-resistance (Rds On) of 250mOhm is achieved at 13A and a gate-source voltage (Vgs) of 10V. Key characteristics include a gate charge (Qg) of 200 nC at 10V and input capacitance (Ciss) of 5100 pF at 25V. Designed for surface mounting, it comes in a TO-268AA package. This component is suitable for applications in power supplies, motor control, and industrial power systems. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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