IXFT26N50Q TR
MOSFET N-CH 500V 26A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFT26N50Q-TR is an N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 26 A at 25°C (Tc). With a maximum power dissipation of 300 W (Tc), it offers robust performance. The Rds(On) is specified at 200 mOhm maximum at 13 A and 10 V Vgs. Key parameters include a Gate Charge (Qg) of 95 nC (max) at 10 V and Input Capacitance (Ciss) of 3900 pF (max) at 25 V. This device is housed in a TO-268HV (IXFT) surface mount package and operates within a temperature range of -55°C to 150°C. It is supplied on a tape and reel for automated assembly. Applications include power supplies, motor control, and industrial power systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268HV (IXFT) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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