IXFT26N50Q
MOSFET N-CH 500V 26A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT26N50Q is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 26A at 25°C case temperature. Its low on-resistance (Rds On) of 200mOhm at 13A and 10V gate drive voltage minimizes conduction losses. The MOSFET offers a maximum power dissipation of 300W (Tc) and a gate charge (Qg) of 95 nC at 10V, ensuring efficient switching performance. Packaged in a surface-mount TO-268AA (TO-268-3, D3PAK) case, it is suitable for demanding applications in power supplies, industrial automation, and motor control systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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