IXFT26N100XHV
MOSFET N-CH 1000V 26A TO268HVManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT26N100XHV is an N-Channel Power MOSFET from the HiPerFET™, Ultra X series, designed for high voltage applications. This component features a maximum drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) rating of 26A at 25°C (Ta). The device exhibits a low on-resistance (Rds On) of 320mOhm at 500mA and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 113 nC at 10V and input capacitance (Ciss) of 3290 pF at 25V. The IXFT26N100XHV is housed in a TO-268HV package, suitable for surface mounting, and operates over a temperature range of -55°C to 150°C. This MOSFET is utilized in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 860mW (Ta) |
| Vgs(th) (Max) @ Id | 6V @ 4mA |
| Supplier Device Package | TO-268HV (IXFT) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V |
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