IXFT24N50
MOSFET N-CH 500V 24A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFT24N50 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) rating of 24A at 25°C, with a maximum power dissipation of 300W. The IXFT24N50 utilizes a surface mount TO-268AA package, facilitating integration into compact designs. Key electrical characteristics include a low on-resistance (Rds On) of 230mOhm maximum at 12A and 10V gate drive, and a gate charge (Qg) of 160nC maximum at 10V. The input capacitance (Ciss) is rated at 4200pF maximum at 25V. This device is suitable for applications in power supplies, industrial motor control, and renewable energy systems operating within a temperature range of -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
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