IXFT21N50Q
MOSFET N-CH 500V 21A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT21N50Q is a HiPerFET™ N-Channel Power MOSFET designed for demanding applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C (Tc). With a maximum power dissipation of 280W (Tc) and a low on-resistance (Rds On) of 250mOhm at 10.5A and 10V, it offers efficient power handling. The device utilizes surface mount technology, housed in a TO-268AA package. Key electrical characteristics include a gate charge (Qg) of 84 nC at 10V and input capacitance (Ciss) of 3000 pF at 25V. This MOSFET is suitable for use in power supplies, motor control, and lighting applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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