IXFT20N80Q
MOSFET N-CH 800V 20A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFT20N80Q is an N-Channel Power MOSFET offering an 800V drain-source voltage (Vds) and a continuous drain current (Id) of 20A at 25°C. This device features a low on-resistance (Rds On) of 420mOhm maximum at 10A and 10V Vgs, with a gate charge (Qg) of 200nC maximum at 10V. The input capacitance (Ciss) is 5100pF maximum at 25V. Designed for surface mounting, it is housed in a TO-268AA package, also known as TO-268-3, D3PAK. With a maximum power dissipation of 360W at 25°C (Tc) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for high-voltage switching applications in power supplies, industrial motor control, and lighting systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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