IXFT20N60Q
MOSFET N-CH 600V 20A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFT20N60Q is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C (Tc). With a maximum power dissipation of 300W (Tc), it offers robust thermal performance. The on-resistance (Rds On) is rated at a maximum of 350mOhm at 10A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 90nC at 10V and an input capacitance (Ciss) of 3300pF at 25V. The MOSFET technology utilizes a TO-268AA surface mount package, facilitating efficient board integration. This component is suitable for use in power supplies, motor control, and industrial applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
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