IXFT18N90P
MOSFET N-CH 900V 18A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT18N90P is a HiPerFET™ Polar Series N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 900V and a continuous Drain Current (Id) of 18A (Tc) at 25°C, with a maximum power dissipation of 540W (Tc). The on-resistance (Rds On) is specified at a maximum of 600mOhm at 500mA and 10V gate drive. Key parameters include input capacitance (Ciss) of 5230pF at 25V and gate charge (Qg) of 97nC at 10V. This surface mount device is packaged in a TO-268AA (TO-268-3, D3PAK) and operates within a temperature range of -55°C to 150°C. It finds application in power factor correction, switch-mode power supplies, and motor control.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 97 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5230 pF @ 25 V |
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