IXFT17N80Q
MOSFET N-CH 800V 17A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFT17N80Q is an N-Channel HiPerFET™ power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 17A at 25°C. With a maximum on-resistance (Rds On) of 600mOhm at 500mA and 10V gate-source voltage, it offers efficient switching characteristics. The device boasts a high power dissipation capability of 400W at the case temperature. Key parameters include a gate charge (Qg) of 95 nC at 10V and input capacitance (Ciss) of 3600 pF at 25V. The IXFT17N80Q is housed in a TO-268AA surface-mount package, suitable for operation across a temperature range of -55°C to 150°C. This MOSFET is utilized in power supply designs, power factor correction circuits, and industrial motor control applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |