IXFT16N90Q
MOSFET N-CH 900V 16A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFT16N90Q is a high-efficiency N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 900 V and a continuous Drain Current (Id) of 16 A at 25°C (Tc). With a maximum power dissipation of 360 W (Tc), it is well-suited for high-power switching applications. The IXFT16N90Q offers a low on-resistance (Rds On) of 650 mOhm at 8 A and 10 V, minimizing conduction losses. Its surface mount TO-268AA package facilitates efficient thermal management. This MOSFET is utilized in power supply units, industrial motor control, and high-voltage power conversion systems. Key parameters include Gate Charge (Qg) of 170 nC @ 10 V and Input Capacitance (Ciss) of 4000 pF @ 25 V. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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