IXFT15N100Q3
MOSFET N-CH 1000V 15A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT15N100Q3 is an N-Channel HiPerFET™, Q3 Class Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) of 15 A at 25°C (Tc). With a maximum power dissipation of 690 W (Tc) and a low on-resistance of 1.05 Ohm at 7.5 A and 10 V, it offers efficient power handling. The device utilizes advanced MOSFET technology and is housed in a TO-268AA surface mount package. Key electrical characteristics include a gate charge (Qg) of 64 nC at 10 V and input capacitance (Ciss) of 3250 pF at 25 V. The IXFT15N100Q3 is suitable for use in power supplies, motor control, and industrial applications demanding robust high-voltage switching.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 690W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V |
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