IXFT15N100Q
MOSFET N-CH 1000V 15A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT15N100Q is an N-Channel HiPerFET™ power MOSFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 1000 V and a continuous drain current (Id) of 15A at 25°C (Tc). With a maximum power dissipation of 360W (Tc), it is suitable for demanding power conversion tasks. The Rds On (Max) is 700mOhm at 500mA and 10V. Key characteristics include a gate charge (Qg) of 170 nC at 5V and input capacitance (Ciss) of 4500 pF at 25V. The IXFT15N100Q utilizes Metal Oxide technology and is housed in a TO-268AA surface mount package, making it ideal for use in power supplies, industrial motor control, and high-voltage switching applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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