IXFT14N100
MOSFET N-CH 1000V 14A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT14N100 is a HiPerFET™ N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 14 A at 25°C, with a maximum power dissipation (Pd) of 360 W at the same temperature. The device exhibits a low on-resistance (Rds(on)) of 750 mOhm maximum at 500 mA and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 220 nC maximum at 10 V and an input capacitance (Ciss) of 4500 pF maximum at 25 V. The IXFT14N100 utilizes Metal Oxide technology and is housed in a TO-268AA surface mount package, suitable for demanding power conversion circuits in industries such as industrial power supplies, motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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