IXFT13N80Q
MOSFET N-CH 800V 13A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFT13N80Q is an 800V N-Channel HiPerFET™, Q Class MOSFET designed for high-voltage switching applications. This device offers a continuous drain current of 13A (Tc) and a maximum power dissipation of 250W (Tc). Featuring a low on-resistance of 700mOhm at 6.5A and 10V, it ensures efficient power transfer. Key parameters include a gate charge of 90 nC @ 10 V and an input capacitance of 3250 pF @ 25 V. The TO-268AA surface mount package facilitates integration into compact designs. This component is suitable for use in power supplies, industrial motor control, and high-voltage power conversion systems.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFH12N100Q
MOSFET N-CH 1000V 12A TO247AD
IXFP4N100Q
MOSFET N-CH 1000V 4A TO220AB
IXFA4N100Q-TRL
MOSFET N-CH 1000V 4A TO263
