IXFT13N100
MOSFET N-CH 1000V 12.5A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™ IXFT13N100 is an N-Channel power MOSFET designed for high voltage applications. This device features a drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 12.5 A at 25°C (Tc). With a maximum power dissipation of 300 W (Tc), it is suitable for demanding power conversion and switching applications. The IXFT13N100 offers a low on-resistance (Rds On) of 900 mOhm at 500 mA and 10 V gate drive. Key parameters include input capacitance (Ciss) of 4000 pF at 25 V and gate charge (Qg) of 155 nC at 10 V. This MOSFET is housed in a TO-268AA package for surface mounting. It finds use in power supplies, lighting, and industrial motor control.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM75-01F
MOSFET 2N-CH 100V 75A I4-PAC
IXFX64N60Q3
MOSFET N-CH 600V 64A PLUS247-3
VMO650-01F
MOSFET N-CH 100V 690A Y3-DCB
