IXFT12N100Q
MOSFET N-CH 1000V 12A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFT12N100Q is an N-Channel Power MOSFET designed for high-voltage applications. This component offers a Drain-to-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) of 12A at 25°C (Tc). With a maximum power dissipation of 300W (Tc), it is suitable for demanding power conversion tasks. The device features a low on-resistance (Rds On) of 1.05 Ohm at 6A and 10V, minimizing conduction losses. Key parameters include a gate charge (Qg) of 90 nC at 10V and input capacitance (Ciss) of 2900 pF at 25V. The IXFT12N100Q is packaged in a TO-268AA (D3PAK) surface mount configuration, facilitating integration into compact designs. This MOSFET is commonly employed in power supplies, industrial motor control, and renewable energy systems. It operates reliably across a wide temperature range from -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
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