IXFT12N100F
MOSFET N-CH 1000V 12A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFT12N100F is a HiPerRF™ Series N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 1000 V and a continuous drain current (Id) rating of 12 A at 25°C (Tc). With a maximum power dissipation of 300 W (Tc), it offers robust performance for demanding power conversion tasks. The Rds On is specified at a maximum of 1.05 Ohms at 6 A and 10 V Vgs. Key parameters include a Gate Charge (Qg) of 77 nC at 10 V and an input capacitance (Ciss) of 2700 pF at 25 V. The IXFT12N100F utilizes a surface mount TO-268-3, D3PAK package, suitable for automated assembly. This component is commonly employed in high-voltage power supplies, industrial motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerRF™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Supplier Device Package | TO-268 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |