IXFT12N100
MOSFET N-CH 1000V 12A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT12N100 is an N-Channel HiPerFET™ Power MOSFET designed for high voltage applications. This component offers a Drain-Source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 12 A at 25°C, with a maximum power dissipation of 300 W at the same temperature. Featuring a low on-resistance of 1.05 Ohms maximum at 6 A and 10 V gate drive, the IXFT12N100 utilizes Metal Oxide technology. Key parameters include a gate charge (Qg) of 155 nC maximum at 10 V and input capacitance (Ciss) of 4000 pF maximum at 25 V. The device is housed in a TO-268AA surface mount package and operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power switching applications across various industries, including industrial power supplies and high-voltage conversion systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |