IXFR80N20Q
MOSFET N-CH 200V 71A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR80N20Q is a HiPerFET™ N-Channel Power MOSFET designed for high-performance applications. This component features a maximum drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 71 A at 25°C. With a low on-resistance (Rds On) of 28 mOhm at 80 A and 10 V gate-source voltage, it offers efficient power handling up to 310 W (Tc). The device utilizes a Metal Oxide technology and is housed in an ISOPLUS247™ package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 180 nC @ 10 V and input capacitance (Ciss) of 4600 pF @ 25 V. The IXFR80N20Q is typically employed in power conversion, motor control, and power supply applications where robust performance and thermal management are critical. It operates within an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
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