IXFR80N15Q
MOSFET N-CH 150V 75A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ N-Channel Power MOSFET, part number IXFR80N15Q, offers a 150V drain-source voltage and a continuous drain current capability of 75A at 25°C (case temperature). This through-hole component features a maximum on-resistance of 22.5mOhm at 40A and 10V gate-source voltage. The ISOPLUS247™ package provides 310W of power dissipation at 25°C (case temperature). Key parameters include a gate charge of 180nC at 10V and input capacitance of 4600pF at 25V. This device is suitable for high-power switching applications across various industries including industrial automation, power supplies, and electric vehicle charging. Operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
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