IXFR80N10Q
MOSFET N-CH 100V 76A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFR80N10Q is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 76A at 25°C (Tc), with a maximum power dissipation of 310W (Tc). The low on-resistance (Rds On) of 15mOhm is achieved at 76A and 10V gate drive, indicating excellent conduction efficiency. Key parameters include a gate charge (Qg) of 180 nC at 10V and input capacitance (Ciss) of 4500 pF at 25V. The device utilizes a Through Hole mounting type in an ISOPLUS247™ package, suitable for demanding thermal management. Operating temperature range is -55°C to 150°C (TJ). This MOSFET finds application in power supplies, motor control, and industrial power systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 76A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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