IXFR70N15
MOSFET N-CH 150V 67A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFR70N15 is a high-performance N-Channel MOSFET designed for demanding power applications. This through-hole component features a maximum drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 67A at 25°C (Tc). With a low on-resistance (Rds On) of 28mOhm at 35A and 10V Vgs, it minimizes conduction losses. The device boasts a high power dissipation capability of 250W (Tc) and a typical gate charge (Qg) of 180 nC at 10V. Its ISOPLUS247™ package provides efficient thermal management. This MOSFET is suitable for applications in industrial, automotive, and power supply sectors. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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